Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
United Kingdom
Sign in
Selective Language
Current language of your choice:
United Kingdom
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
IPP08CN10N G
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP08CN10N G-DG
Description:
MOSFET N-CH 100V 95A TO220-3
Detailed Description:
N-Channel 100 V 95A (Tc) 167W (Tc) Through Hole PG-TO220-3
Inventory:
RFQ Online
12803461
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
IPP08CN10N G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 95A, 10V
Vgs(th) (Max) @ Id
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6660 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP08C
Datasheet & Documents
Datasheets
IPP08CN10N G
Additional Information
Other Names
IPP08CN10N G-DG
IPP08CN10NGXK
IPP08CN10NGIN
IPP08CN10NGX
SP000680844
SP000096465
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDP100N10
MANUFACTURER
Fairchild Semiconductor
QUANTITY AVAILABLE
2970
DiGi PART NUMBER
FDP100N10-DG
UNIT PRICE
1.72
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
PSMN4R6-60PS,127
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
7843
DiGi PART NUMBER
PSMN4R6-60PS,127-DG
UNIT PRICE
1.15
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
PSMN009-100P,127
MANUFACTURER
NXP Semiconductors
QUANTITY AVAILABLE
291
DiGi PART NUMBER
PSMN009-100P,127-DG
UNIT PRICE
1.44
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
DMT10H010LCT
MANUFACTURER
Diodes Incorporated
QUANTITY AVAILABLE
43
DiGi PART NUMBER
DMT10H010LCT-DG
UNIT PRICE
0.64
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
PSMN5R0-80PS,127
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
23033
DiGi PART NUMBER
PSMN5R0-80PS,127-DG
UNIT PRICE
1.37
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
IRF1404L
MOSFET N-CH 40V 162A TO262
IPI60R520CPAKSA1
MOSFET N-CH 600V 6.8A TO262-3
IPI22N03S4L15AKSA1
MOSFET N-CH 30V 22A TO262-3
IRF60DM206
MOSFET N-CH 60V 130A DIRECTFET